50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier:Ge Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: two sides epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:"> 50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier:"> 50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier:Ge Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: two sides epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:"> 50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier:"> 50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier:Ge Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: two sides epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:"> Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier: – www.iske.net

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Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier:

$396.18

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50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier:">
Description

Thickness of Ta diffusion barrier: 20-50 nm

you can add an ingredient in a certain weight ratio to a mixed solution

Polishing:                         single  side  polished

please read these instructions carefully before installation and before using it for the first time

125 mm (+/-0

Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US Battery R&D Thickness of Ta diffusion barrier:Ge Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: two sides epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:

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