Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm High-Throughput Battery Research as well as high electrode

as well as high electrode material loading

Growing Method:              VGF

Body liner: Transparent quartz body allows you to perform In-situ Raman and Infrared Spectroscopy

4 mm  x 1

Never use N2 gases in the glovebox

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm High-Throughput Battery Research as well as high electrodeSingle crystal Si, (CZ) Conductivity: P type ( B doped) Resistivity: 0. 004 0. 006 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 5mm Orientation: (111) 4 + 0. 5 degree off Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner